@article{82c562cac7884db583b2381191ed5954,
title = "High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene",
abstract = "High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.",
author = "W. Ou-Yang and T. Uemura and K. Miyake and S. Onish and T. Kato and M. Katayama and M. Kang and K. Takimiya and M. Ikeda and H. Kuwabara and M. Hamada and J. Takeya",
note = "Funding Information: We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO), the Japan Science and Technology Agency (JST), and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan for financial support.",
year = "2012",
month = nov,
day = "26",
doi = "10.1063/1.4769436",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "22",
}