High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm

Yoshio Noguchi; Hiroshi Yasaka; Osamu Mikami; Haruo Nagai

doi:10.1063/1.346093

High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm

Yoshio Noguchi, Hiroshi Yasaka, Osamu Mikami, Haruo Nagai

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.

Original language	English
Pages (from-to)	2665-2667
Number of pages	3
Journal	Journal of Applied Physics
Volume	67
Issue number	5
DOIs	https://doi.org/10.1063/1.346093
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.346093

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title = "High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm",

abstract = "An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.",

author = "Yoshio Noguchi and Hiroshi Yasaka and Osamu Mikami and Haruo Nagai",

year = "1990",

doi = "10.1063/1.346093",

language = "English",

volume = "67",

pages = "2665--2667",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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T1 - High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm

AU - Noguchi, Yoshio

AU - Yasaka, Hiroshi

AU - Mikami, Osamu

AU - Nagai, Haruo

PY - 1990

Y1 - 1990

N2 - An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.

AB - An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.

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U2 - 10.1063/1.346093

DO - 10.1063/1.346093

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm

Abstract

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