High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm

Yoshio Noguchi, Hiroshi Yasaka, Osamu Mikami, Haruo Nagai

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.

Original languageEnglish
Pages (from-to)2665-2667
Number of pages3
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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