High power IGBT module with new AlN substrate

H. Nogawa; A. Hirao; Y. Nishimura; Y. Tamai; F. Momose; T. Saito; E. Mochizuki; Y. Takahashi

High power IGBT module with new AlN substrate

H. Nogawa, A. Hirao, Y. Nishimura, Y. Tamai, F. Momose, T. Saito, E. Mochizuki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents the packaging technologies for high power insulated gate bipolar transistor (IGBT) module which applied new thin aluminum nitride (AlN) insulated substrates with high heat dissipation and reliability to achieve higher power density. To apply new thin AlN insulated substrates to the high power IGBT module, we developed thin AlN ceramic substrate with high strength for higher reliability in thermal cycle test. In addition, applying the terminal with high current capability and reliability is necessary for high power IGBT module. For the purpose of that, the ultrasonic copper welding technology for AlN insulated substrates are developed. These technologies lead to increase the output power density compared to the conventional packaging technologies of high power modules.

Original language	English
Title of host publication	PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1001-1008
Number of pages	8
ISBN (Electronic)	9783800741861
Publication status	Published - 2016 Jan 1
Externally published	Yes
Event	2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 - Nuremberg, Germany Duration: 2016 May 10 → 2016 May 12

Publication series

Name	PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Other

Other	2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016
Country/Territory	Germany
City	Nuremberg
Period	16/5/10 → 16/5/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Optimization
Renewable Energy, Sustainability and the Environment
Artificial Intelligence
Hardware and Architecture
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Nogawa, H., Hirao, A., Nishimura, Y., Tamai, Y., Momose, F., Saito, T., Mochizuki, E., & Takahashi, Y. (2016). High power IGBT module with new AlN substrate. In PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1001-1008). [7499465] (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). Institute of Electrical and Electronics Engineers Inc..

High power IGBT module with new AlN substrate. / Nogawa, H.; Hirao, A.; Nishimura, Y. et al.

PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1001-1008 7499465 (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nogawa, H, Hirao, A, Nishimura, Y, Tamai, Y, Momose, F, Saito, T, Mochizuki, E & Takahashi, Y 2016, High power IGBT module with new AlN substrate. in PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., 7499465, PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Institute of Electrical and Electronics Engineers Inc., pp. 1001-1008, 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016, Nuremberg, Germany, 16/5/10.

Nogawa H, Hirao A, Nishimura Y, Tamai Y, Momose F, Saito T et al. High power IGBT module with new AlN substrate. In PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1001-1008. 7499465. (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Nogawa, H. ; Hirao, A. ; Nishimura, Y. et al. / High power IGBT module with new AlN substrate. PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1001-1008 (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

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abstract = "This paper presents the packaging technologies for high power insulated gate bipolar transistor (IGBT) module which applied new thin aluminum nitride (AlN) insulated substrates with high heat dissipation and reliability to achieve higher power density. To apply new thin AlN insulated substrates to the high power IGBT module, we developed thin AlN ceramic substrate with high strength for higher reliability in thermal cycle test. In addition, applying the terminal with high current capability and reliability is necessary for high power IGBT module. For the purpose of that, the ultrasonic copper welding technology for AlN insulated substrates are developed. These technologies lead to increase the output power density compared to the conventional packaging technologies of high power modules.",

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AU - Mochizuki, E.

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N2 - This paper presents the packaging technologies for high power insulated gate bipolar transistor (IGBT) module which applied new thin aluminum nitride (AlN) insulated substrates with high heat dissipation and reliability to achieve higher power density. To apply new thin AlN insulated substrates to the high power IGBT module, we developed thin AlN ceramic substrate with high strength for higher reliability in thermal cycle test. In addition, applying the terminal with high current capability and reliability is necessary for high power IGBT module. For the purpose of that, the ultrasonic copper welding technology for AlN insulated substrates are developed. These technologies lead to increase the output power density compared to the conventional packaging technologies of high power modules.

AB - This paper presents the packaging technologies for high power insulated gate bipolar transistor (IGBT) module which applied new thin aluminum nitride (AlN) insulated substrates with high heat dissipation and reliability to achieve higher power density. To apply new thin AlN insulated substrates to the high power IGBT module, we developed thin AlN ceramic substrate with high strength for higher reliability in thermal cycle test. In addition, applying the terminal with high current capability and reliability is necessary for high power IGBT module. For the purpose of that, the ultrasonic copper welding technology for AlN insulated substrates are developed. These technologies lead to increase the output power density compared to the conventional packaging technologies of high power modules.

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High power IGBT module with new AlN substrate

Abstract

Publication series

Other

ASJC Scopus subject areas

UN SDGs

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