High-power organic field-effect transistors using a three-dimensional structure

Three-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm² and fast switching within 200 ns are realized with an on-off ratio of 10⁵. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized widi organic semiconductors.