High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

Y. Suzuki; H. Nagai; Y. Noguchi; T. Matsuoka; K. Kurumada

doi:10.1049/el:19840598

High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

Y. Suzuki, H. Nagai, Y. Noguchi, T. Matsuoka, K. Kurumada

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

Original language	English
Pages (from-to)	881-882
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	21
DOIs	https://doi.org/10.1049/el:19840598
Publication status	Published - 1984 Oct 11

Keywords

Lasers and laser applications
Semiconductor devices and materials

Access to Document

10.1049/el:19840598

Cite this

@article{4a21d79cfd10409db7eb5247bc569a64,

title = "High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate",

abstract = "A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.",

keywords = "Lasers and laser applications, Semiconductor devices and materials",

author = "Y. Suzuki and H. Nagai and Y. Noguchi and T. Matsuoka and K. Kurumada",

year = "1984",

month = oct,

day = "11",

doi = "10.1049/el:19840598",

language = "English",

volume = "20",

pages = "881--882",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "21",

}

TY - JOUR

T1 - High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

AU - Suzuki, Y.

AU - Nagai, H.

AU - Noguchi, Y.

AU - Matsuoka, T.

AU - Kurumada, K.

PY - 1984/10/11

Y1 - 1984/10/11

N2 - A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

AB - A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

KW - Lasers and laser applications

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0021510459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021510459&partnerID=8YFLogxK

U2 - 10.1049/el:19840598

DO - 10.1049/el:19840598

M3 - Article

AN - SCOPUS:0021510459

SN - 0013-5194

VL - 20

SP - 881

EP - 882

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this