High-power three-dimensional polymer FETs

K. Nakayama, T. Uemura, M. Uno, T. Okamoto, I. Osaka, K. Takimiya, J. Takeya

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report high-power three-dimensional organic field-effect transistors (3D-OFETs) with a newly developed polymer semiconductor of poly(2,7-bis(3- icosylthiophene-2-yl)naphtha[1,2-b:5,6-b']dithiophene) (PNDTBT-20). The active layer is formed on approximately 1 μm-high vertical walls in the 3D structure. The walls are densely arranged so that each channel requires very small area in the substrate, which results in extremely high-output-current per unit area. Large current density exceeding 5 A/cm2 was achieved. Surface wettability of the 3D structure is modified with phenylaminosilanes to reproduce the performance in many devices so that the polymer neatly covers the sidewalls. Such high current density and improved reproducibility can be beneficial for practical applications as current-driven displays using organic light-emitting diodes, for example.

Original languageEnglish
Pages (from-to)S92-S95
JournalCurrent Applied Physics
Issue numberSUPPL.3
Publication statusPublished - 2012 Dec


  • 3D-OFETs
  • Organic field-effect transistors
  • Polymer semiconductor


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