High-pressure synthesis and electrical properties of Mn3Ge5 with Mn11Si19-type structure

H. Takizawa; T. Sato; T. Endo; M. Shimada

doi:10.1016/0022-4596(87)90308-2

High-pressure synthesis and electrical properties of Mn₃Ge₅ with Mn₁₁Si₁₉-type structure

H. Takizawa, T. Sato, T. Endo, M. Shimada

Leadership

Tohoku University

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The new germanium-rich manganese germanide, Mn₃Ge₅, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn₃Ge₅ was identified as possessing the Mn₁₁Si₁₉ type with a tetragonal cell (Schoenflies symbolD_2d). The electrical resistivity of Mn₃Ge₅ increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn₃Ge₅ was ap-type semiconductor or a semimetal.

Original language	English
Pages (from-to)	234-238
Number of pages	5
Journal	Journal of Solid State Chemistry
Volume	68
Issue number	2
DOIs	https://doi.org/10.1016/0022-4596(87)90308-2
Publication status	Published - 1987 Jun

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abstract = "The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal.",

author = "H. Takizawa and T. Sato and T. Endo and M. Shimada",

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AU - Takizawa, H.

AU - Sato, T.

AU - Endo, T.

AU - Shimada, M.

PY - 1987/6

Y1 - 1987/6

N2 - The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal.

AB - The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal.

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High-pressure synthesis and electrical properties of Mn₃Ge₅ with Mn₁₁Si₁₉-type structure

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