High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals

Shintaro Shinjo; Hiro Omi Ueda; Takayuki Sugano; Masahiko Nakanishi; Masahiro Inoue; Noriharu Suematsu

High P_1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals

Shintaro Shinjo, Hiro Omi Ueda, Takayuki Sugano, Masahiko Nakanishi, Masahiro Inoue, Noriharu Suematsu

RIEC - Information Communication Platforms Division

Mitsubishi Electric Corporation

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

A 5.8GHz high P_1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P_1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P_1dB improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P _1dB of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.

Original language	English
Pages	195-198
Number of pages	4
Publication status	Published - 2003
Event	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 10

Conference

Conference	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Philadelphia, PA
Period	03/6/8 → 03/6/10

Cite this

@conference{994ede44b45843e390221b9346eec30c,

title = "High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals",

abstract = "A 5.8GHz high P1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P1dB improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P 1dB of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.",

author = "Shintaro Shinjo and Ueda, {Hiro Omi} and Takayuki Sugano and Masahiko Nakanishi and Masahiro Inoue and Noriharu Suematsu",

year = "2003",

language = "English",

pages = "195--198",

note = "2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 08-06-2003 Through 10-06-2003",

}

High P_1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals. / Shinjo, Shintaro; Ueda, Hiro Omi; Sugano, Takayuki et al.
2003. 195-198 Paper presented at 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Philadelphia, PA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals

AU - Shinjo, Shintaro

AU - Ueda, Hiro Omi

AU - Sugano, Takayuki

AU - Nakanishi, Masahiko

AU - Inoue, Masahiro

AU - Suematsu, Noriharu

PY - 2003

Y1 - 2003

N2 - A 5.8GHz high P1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P1dB improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P 1dB of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.

AB - A 5.8GHz high P1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P1dB improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P 1dB of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.

UR - http://www.scopus.com/inward/record.url?scp=0042090284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042090284&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0042090284

SP - 195

EP - 198

T2 - 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 8 June 2003 through 10 June 2003

ER -

High P_1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals

Abstract

Conference

Other files and links

Fingerprint

Cite this