High quality anatase Ti O2 film: Field-effect transistor based on anatase Ti O2

We proposed an oxygen modulation method for the growth of high crystalline and insulative anatase films. The cycle of deposition under low oxygen pressure and annealing under high oxygen pressure was repeated every 1 nm thick growth. The sharp reflection high-energy electron diffraction pattern and step-and-terrace surface morphology confirmed high crystallinity of the obtained anatase film; the resistivity reached as high as 1.8 M cm. As a result, the present anatase film exhibited high performance in a field-effect transistor as an active channel. On-to-off current ratio and field-effect mobility exceeded 105 and 0.3 cm2 V s, respectively.