High-quality epitaxial TiO2 thin films grown on α-Al2O3 substrates by pulsed laser deposition

R. Shinohara; T. Yamaki; S. Yamamoto; H. Itoh; K. Asai

doi:10.1023/A:1016090110315

High-quality epitaxial TiO₂ thin films grown on α-Al₂O₃ substrates by pulsed laser deposition

R. Shinohara, T. Yamaki, S. Yamamoto, H. Itoh, K. Asai

ENG - Applied Chemistry

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Epitaxial TiO₂ rutile films were grown at 200, 400 and 600°C by pulsed laser deposition (PLD) and their orientations were controlled by the use of α-Al₂O₃ (1000) and (101̄0) substrates. The crystallinity of the films grown at 600°C was higher than that of films deposited by other methods.

Original language	English
Pages (from-to)	967-969
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1023/A:1016090110315
Publication status	Published - 2002 Jun 15

Access to Document

10.1023/A:1016090110315

Cite this

@article{2de28b386b1648569c297bab6171efa3,

title = "High-quality epitaxial TiO2 thin films grown on α-Al2O3 substrates by pulsed laser deposition",

abstract = "Epitaxial TiO2 rutile films were grown at 200, 400 and 600°C by pulsed laser deposition (PLD) and their orientations were controlled by the use of α-Al2O3 (1000) and (10{\=1}0) substrates. The crystallinity of the films grown at 600°C was higher than that of films deposited by other methods.",

author = "R. Shinohara and T. Yamaki and S. Yamamoto and H. Itoh and K. Asai",

year = "2002",

month = jun,

day = "15",

doi = "10.1023/A:1016090110315",

language = "English",

volume = "21",

pages = "967--969",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

number = "12",

}

TY - JOUR

T1 - High-quality epitaxial TiO2 thin films grown on α-Al2O3 substrates by pulsed laser deposition

AU - Shinohara, R.

AU - Yamaki, T.

AU - Yamamoto, S.

AU - Itoh, H.

AU - Asai, K.

PY - 2002/6/15

Y1 - 2002/6/15

N2 - Epitaxial TiO2 rutile films were grown at 200, 400 and 600°C by pulsed laser deposition (PLD) and their orientations were controlled by the use of α-Al2O3 (1000) and (101̄0) substrates. The crystallinity of the films grown at 600°C was higher than that of films deposited by other methods.

AB - Epitaxial TiO2 rutile films were grown at 200, 400 and 600°C by pulsed laser deposition (PLD) and their orientations were controlled by the use of α-Al2O3 (1000) and (101̄0) substrates. The crystallinity of the films grown at 600°C was higher than that of films deposited by other methods.

UR - http://www.scopus.com/inward/record.url?scp=0037098249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037098249&partnerID=8YFLogxK

U2 - 10.1023/A:1016090110315

DO - 10.1023/A:1016090110315

M3 - Article

AN - SCOPUS:0037098249

SN - 0261-8028

VL - 21

SP - 967

EP - 969

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 12

ER -

High-quality epitaxial TiO₂ thin films grown on α-Al₂O₃ substrates by pulsed laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this