High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure

Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Citations (Scopus)


The growth of graphene on 3C-SiC/Si heterostructure is a promising approach, which provides low production cost, high scalability and easiness of nano-electro-mechanical system fabrication. However, the quality of graphene is still insufficient for device applications due to mediocre morphological and structural quality of the 3C-SiC epilayers compared to bulk SiC crystals and to excessive Si out-diffusion from the Si substrate. Here, we propose a solution of inserting a 4H-A1N layer between 3C-SiC and Si, which allows us to polish the 3C-SiC film without enhancement of the Si out-diffusion despite the thinning of the 3C-SiC. With this insertion, a considerable quality improvement is achieved in our graphene-on-silicon.

Original languageEnglish
Title of host publicationHeteroSiC
EditorsMarcin Zielinski, Marcin Zielinski
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Electronic)9783038352945, 9783038352945
Publication statusPublished - 2015
Event2013 HeteroSiC-WASMPE Conference - Nice, France
Duration: 2013 Jun 172013 Jun 19

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Conference2013 HeteroSiC-WASMPE Conference


  • 3C-SiC/4H-AIN/Si
  • CMP
  • Epitaxial Graphene
  • Hydrogenation
  • Raman


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