High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

Cheng Xin Wang; Guo Wei Yang; Tie Chen Zhang; Hong Wu Liu; Yong Hao Han; Ji Feng Luo; Chun Xiao Gao; Guang Tian Zou

doi:10.1063/1.1631059

High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

Cheng Xin Wang, Guo Wei Yang, Tie Chen Zhang, Hong Wu Liu, Yong Hao Han, Ji Feng Luo, Chun Xiao Gao, Guang Tian Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.

Original language	English
Pages (from-to)	4854-4856
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1631059
Publication status	Published - 2003 Dec 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal",

abstract = "An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.",

author = "Wang, {Cheng Xin} and Yang, {Guo Wei} and Zhang, {Tie Chen} and Liu, {Hong Wu} and Han, {Yong Hao} and Luo, {Ji Feng} and Gao, {Chun Xiao} and Zou, {Guang Tian}",

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T1 - High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

AU - Wang, Cheng Xin

AU - Yang, Guo Wei

AU - Zhang, Tie Chen

AU - Liu, Hong Wu

AU - Han, Yong Hao

AU - Luo, Ji Feng

AU - Gao, Chun Xiao

AU - Zou, Guang Tian

PY - 2003/12/8

Y1 - 2003/12/8

N2 - An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.

AB - An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

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