An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Dec 8|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)