High quality SiO2/Al2O3gate stack for GaN metal-oxide-semiconductor field-effect transistor

Hiroshi Kambayashi, Takehiko Nomura, Hirokazu Ueda, Katsushige Harada, Yuichiro Morozumi, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


High quality SiO2/Al2O3gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al2O3could realize a low interface-state density between Al2O3and GaN, however, the breakdown field was low. By incorporating the merits of both Al2O3and SiO 2, which has a high breakdown field and a large charge-to-breakdown, SiO2/Al2O3gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-tobreakdown. The SiO2/Al2O3gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOSHFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2 V-1s-1.

Original languageEnglish
Article number04CF09
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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