High quality SiO2/Al2O3gate stack for GaN metal-oxide-semiconductor field-effect transistor

Hiroshi Kambayashi; Takehiko Nomura; Hirokazu Ueda; Katsushige Harada; Yuichiro Morozumi; Kazuhide Hasebe; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.7567/JJAP.52.04CF09

High quality SiO₂/Al₂O₃gate stack for GaN metal-oxide-semiconductor field-effect transistor

Hiroshi Kambayashi, Takehiko Nomura, Hirokazu Ueda, Katsushige Harada, Yuichiro Morozumi, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

High quality SiO₂/Al₂O₃gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al₂O₃could realize a low interface-state density between Al₂O₃and GaN, however, the breakdown field was low. By incorporating the merits of both Al₂O₃and SiO ₂, which has a high breakdown field and a large charge-to-breakdown, SiO₂/Al₂O₃gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-tobreakdown. The SiO₂/Al₂O₃gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOSHFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm₂ V_-1s_-1.

Original language	English
Article number	04CF09
Journal	Japanese journal of applied physics
Volume	52
Issue number	4 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.04CF09
Publication status	Published - 2013 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "High quality SiO2/Al2O3gate stack for GaN metal-oxide-semiconductor field-effect transistor",

abstract = "High quality SiO2/Al2O3gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al2O3could realize a low interface-state density between Al2O3and GaN, however, the breakdown field was low. By incorporating the merits of both Al2O3and SiO 2, which has a high breakdown field and a large charge-to-breakdown, SiO2/Al2O3gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-tobreakdown. The SiO2/Al2O3gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOSHFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2 V-1s-1.",

author = "Hiroshi Kambayashi and Takehiko Nomura and Hirokazu Ueda and Katsushige Harada and Yuichiro Morozumi and Kazuhide Hasebe and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2013",

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doi = "10.7567/JJAP.52.04CF09",

language = "English",

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AU - Kambayashi, Hiroshi

AU - Nomura, Takehiko

AU - Ueda, Hirokazu

AU - Harada, Katsushige

AU - Morozumi, Yuichiro

AU - Hasebe, Kazuhide

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2013/4

Y1 - 2013/4

N2 - High quality SiO2/Al2O3gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al2O3could realize a low interface-state density between Al2O3and GaN, however, the breakdown field was low. By incorporating the merits of both Al2O3and SiO 2, which has a high breakdown field and a large charge-to-breakdown, SiO2/Al2O3gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-tobreakdown. The SiO2/Al2O3gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOSHFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2 V-1s-1.

AB - High quality SiO2/Al2O3gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al2O3could realize a low interface-state density between Al2O3and GaN, however, the breakdown field was low. By incorporating the merits of both Al2O3and SiO 2, which has a high breakdown field and a large charge-to-breakdown, SiO2/Al2O3gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-tobreakdown. The SiO2/Al2O3gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOSHFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2 V-1s-1.

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High quality SiO₂/Al₂O₃gate stack for GaN metal-oxide-semiconductor field-effect transistor

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