High-quality two-dimensional electron gas at an inverted undoped heterointerface

Y. Hirayama; K. Muraki; T. Saku

doi:10.1006/spmi.1998.0651

High-quality two-dimensional electron gas at an inverted undoped heterointerface

Y. Hirayama, K. Muraki, T. Saku

Research output: Contribution to journal › Article › peer-review

Abstract

A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 10¹⁰ cm^-2.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Superlattices and Microstructures
Volume	25
Issue number	1-2
DOIs	https://doi.org/10.1006/spmi.1998.0651
Publication status	Published - 1999 Jan
Externally published	Yes

Keywords

2DEG
AlGaAs/GaAs
Corbino-disk
Gated undoped heterostructure

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1998.0651

Cite this

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title = "High-quality two-dimensional electron gas at an inverted undoped heterointerface",

abstract = "A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 1010 cm-2.",

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author = "Y. Hirayama and K. Muraki and T. Saku",

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T1 - High-quality two-dimensional electron gas at an inverted undoped heterointerface

AU - Hirayama, Y.

AU - Muraki, K.

AU - Saku, T.

PY - 1999/1

Y1 - 1999/1

N2 - A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 1010 cm-2.

AB - A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 1010 cm-2.

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KW - AlGaAs/GaAs

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KW - Gated undoped heterostructure

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High-quality two-dimensional electron gas at an inverted undoped heterointerface

Abstract

Keywords

ASJC Scopus subject areas

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