TY - JOUR
T1 - High reliability CoFeB/MgO/CoFeB magnetic tunnel junction fabrication using low-damage ion beam etching
AU - Park, Hyeonwoo
AU - Teramoto, Akinobu
AU - Tsuchimoto, Jun Ichi
AU - Hashimoto, Keiichi
AU - Suwa, Tomoyuki
AU - Hayashi, Marie
AU - Kuroda, Rihito
AU - Tsunekawa, Koji
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - In this work, the impact of pattern edge of MgO films due to electrode separation process on its electrical reliability was investigated by measuring and analyzing I-V and time-dependent dielectric breakdown (TDDB) characteristics of MgO films with different pattern edge length. The measured TDDB lifetime at 63% drastically decreased from 1440 to 2 s when the pattern edge length increased from 32 to 320 μm, thus the electric reliability of MgO films can be significantly degraded due to the pattern edge. It was found that this issue can be solved by improving the process condition of ion bean etching (IBE), by turning the IBE angle and the IBE angle divergence. These findings can lead to high reliability magnetic tunnel junction fabrication in spin-transfer torque magnetic random access memory.
AB - In this work, the impact of pattern edge of MgO films due to electrode separation process on its electrical reliability was investigated by measuring and analyzing I-V and time-dependent dielectric breakdown (TDDB) characteristics of MgO films with different pattern edge length. The measured TDDB lifetime at 63% drastically decreased from 1440 to 2 s when the pattern edge length increased from 32 to 320 μm, thus the electric reliability of MgO films can be significantly degraded due to the pattern edge. It was found that this issue can be solved by improving the process condition of ion bean etching (IBE), by turning the IBE angle and the IBE angle divergence. These findings can lead to high reliability magnetic tunnel junction fabrication in spin-transfer torque magnetic random access memory.
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U2 - 10.35848/1347-4065/ab6cb5
DO - 10.35848/1347-4065/ab6cb5
M3 - Article
AN - SCOPUS:85083334738
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SG
M1 - SGGB05
ER -