@inproceedings{346e481abeec43668cec1509eb7030f1,
title = "High reliability packaging technologies for 175deg.C continuous operation in IGBT module",
abstract = "One solution for increasing the power density in Insulated Gate Bipolar Transistor (IGBT) module is to raise the maximum junction temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the challenges for Tjmax=175°C operation are the decreased power cycling (P/C) capability. We have already reported the failure mechanisms about P/C test and new technologies for improving P/C capability [1]. Especially power module for e-auto mobility, using high ambient temperature, is required to guarantee the 175°C continuous operation. Moreover it required about 10 times longer thermal cycling (T/C) capability than what is used for industry. In this paper, we report the effort to improve the T/C capability using new technologies for 175°C continuous operation.",
keywords = "175°C, Power cycling, Reliability, Thermal cycling",
author = "T. Saito and Y. Nishimura and F. Momose and A. Hirao and A. Morozumi and Y. Tamai and E. Mochizuki and Y. Takahashi",
note = "Publisher Copyright: {\textcopyright} 2015 The Japan Institute of Electronics Packaging.; 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 ; Conference date: 14-04-2015 Through 17-04-2015",
year = "2015",
month = may,
day = "20",
doi = "10.1109/ICEP-IAAC.2015.7111118",
language = "English",
series = "ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "791--794",
booktitle = "ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference",
address = "United States",
}