High remanent magnetization of L10-ordered FePt thin film on MgO/(001) GaAs

Makoto Kohda, Akihiko Ohtsu, Takeshi Seki, Asaya Fujita, Junsaku Nitta, Seiji Mitani, Koki Takanashi

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7 Citations (Scopus)


We investigated the optimized condition of the high remanent magnetization for L10-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature Ts = 300°C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at Ta = 350°C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were Ku = 1.0 ± 0.1 × 107 erg/cm3 and S = 0.75 ± 0.15. respectively, which are almost comparable to those of FePt on a (001) MgO substrate.

Original languageEnglish
Pages (from-to)3269-3271
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 PART 2
Publication statusPublished - 2008 Apr 25


  • GaAs
  • L1-ordered FePt
  • Perpendicular magnetic anisotropy


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