High remanent magnetization of L10-ordered FePt thin film on MgO/(001) GaAs

Makoto Kohda; Akihiko Ohtsu; Takeshi Seki; Asaya Fujita; Junsaku Nitta; Seiji Mitani; Koki Takanashi

doi:10.1143/JJAP.47.3269

High remanent magnetization of L1₀-ordered FePt thin film on MgO/(001) GaAs

Makoto Kohda, Akihiko Ohtsu, Takeshi Seki, Asaya Fujita, Junsaku Nitta, Seiji Mitani, Koki Takanashi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigated the optimized condition of the high remanent magnetization for L1₀-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature T_s = 300°C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at T_a = 350°C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were K_u = 1.0 ± 0.1 × 10⁷ erg/cm³ and S = 0.75 ± 0.15. respectively, which are almost comparable to those of FePt on a (001) MgO substrate.

Original language	English
Pages (from-to)	3269-3271
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.3269
Publication status	Published - 2008 Apr 25

Keywords

GaAs
L1-ordered FePt
Perpendicular magnetic anisotropy

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title = "High remanent magnetization of L10-ordered FePt thin film on MgO/(001) GaAs",

abstract = "We investigated the optimized condition of the high remanent magnetization for L10-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature Ts = 300°C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at Ta = 350°C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were Ku = 1.0 ± 0.1 × 107 erg/cm3 and S = 0.75 ± 0.15. respectively, which are almost comparable to those of FePt on a (001) MgO substrate.",

keywords = "GaAs, L1-ordered FePt, Perpendicular magnetic anisotropy",

author = "Makoto Kohda and Akihiko Ohtsu and Takeshi Seki and Asaya Fujita and Junsaku Nitta and Seiji Mitani and Koki Takanashi",

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T1 - High remanent magnetization of L10-ordered FePt thin film on MgO/(001) GaAs

AU - Kohda, Makoto

AU - Ohtsu, Akihiko

AU - Seki, Takeshi

AU - Fujita, Asaya

AU - Nitta, Junsaku

AU - Mitani, Seiji

AU - Takanashi, Koki

PY - 2008/4/25

Y1 - 2008/4/25

N2 - We investigated the optimized condition of the high remanent magnetization for L10-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature Ts = 300°C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at Ta = 350°C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were Ku = 1.0 ± 0.1 × 107 erg/cm3 and S = 0.75 ± 0.15. respectively, which are almost comparable to those of FePt on a (001) MgO substrate.

AB - We investigated the optimized condition of the high remanent magnetization for L10-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature Ts = 300°C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at Ta = 350°C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were Ku = 1.0 ± 0.1 × 107 erg/cm3 and S = 0.75 ± 0.15. respectively, which are almost comparable to those of FePt on a (001) MgO substrate.

KW - GaAs

KW - L1-ordered FePt

KW - Perpendicular magnetic anisotropy

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SN - 0021-4922

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EP - 3271

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

ER -

High remanent magnetization of L1₀-ordered FePt thin film on MgO/(001) GaAs

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