TY - JOUR
T1 - High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy
AU - Cho, Yasuo
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research (S) (No. 16H06360) from the Japan Society for Promotion of Science (JSPS).
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/10
Y1 - 2017/10
N2 - Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10-22 F/Hz. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. Under an ultrahigh-vacuum condition, SNDM has atomic resolution. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy, noncontact SNDM, and scanning nonlinear dielectric potentiometory have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity.
AB - Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10-22 F/Hz. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. Under an ultrahigh-vacuum condition, SNDM has atomic resolution. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy, noncontact SNDM, and scanning nonlinear dielectric potentiometory have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity.
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U2 - 10.7567/JJAP.56.100101
DO - 10.7567/JJAP.56.100101
M3 - Review article
AN - SCOPUS:85030642611
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10
M1 - 100101
ER -