High resolution EELS study of extended defects in silicon

H. Kohno, N. Arai, T. Mabuchi, M. Hirata, S. Takeda, M. Kohyama, M. Terauchi, M. Tanaka

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic structure of the {113} extended defect in electron-irradiated silicon is investigated by high-resolution transmission electron energy-loss spectroscopy (HR-EELS) combined with the tight-binding and ab initio calculations. We have found that the peak in the imaginary part of the dielectric function, ε2 in the defect-rich region shifts at 2 ∼ 2.5 eV. We attribute this result to the nonvertical interband transition between the defect-localized states at the band edges. The detection of the extended defect in semiconductor in ε2, has been demonstrated for the first time in this study.

Original languageEnglish
Pages (from-to)547-552
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 1
DOIs
Publication statusPublished - 1997

Keywords

  • ab initio
  • EELS
  • Extended defect
  • Interband transition
  • JDOS
  • Tight binding

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