TY - GEN
T1 - High resolution electrodes fabrication for OTFT by using microcontact printing process
AU - Jo, Jeongdal
AU - Lee, Taik Min
AU - Kim, Choon Hwan
AU - Kim, Dong Soo
AU - Kim, Kwang Young
AU - Esashi, Masayoshi
PY - 2006
Y1 - 2006
N2 - The organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than 40 °C. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.
AB - The organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than 40 °C. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.
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M3 - Conference contribution
AN - SCOPUS:33947281569
SN - 089208264X
SN - 9780892082643
T3 - Digital Fabrication 2006 - Final Program and Proceedings
SP - 31
EP - 33
BT - Digital Fabrication 2006 - Final Program and Proceedings
T2 - Digital Fabrication 2006
Y2 - 17 September 2006 through 22 September 2006
ER -