High resolution LAPS using amorphous silicon as the semiconductor material

Werner Moritz, Tatsuo Yoshinobu, Friedhelm Finger, Steffi Krause, Marisa Martin-Fernandez, Michael J. Schöning

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.

Original languageEnglish
Pages (from-to)436-441
Number of pages6
JournalSensors and Actuators B: Chemical
Issue number1-2
Publication statusPublished - 2004 Sept 29


  • Amorphous Si
  • LAPS
  • Photocurrent
  • Semiconductor


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