TY - GEN
T1 - High Resolution Mapping of Subsurface Defects at Si02/SiC Interfaces by Time-Resolved Scanning Nonlinear Dielectric Microscopy
AU - Yamagishi, Yuji
AU - Cho, Yasuo
N1 - Publisher Copyright:
© 2018 ASM International∗ All rights reserved.
PY - 2018
Y1 - 2018
N2 - High resolution observation of density of interface states (Du) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Du were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
AB - High resolution observation of density of interface states (Du) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Du were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
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M3 - Conference contribution
AN - SCOPUS:85122362792
T3 - Conference Proceedings from the International Symposium for Testing and Failure Analysis
SP - 534
EP - 537
BT - ISTFA 2018 - Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis
PB - ASM International
T2 - 44th International Symposium for Testing and Failure Analysis, ISTFA 2018
Y2 - 28 October 2018 through 1 November 2018
ER -