High Resolution Mapping of Subsurface Defects at Si02/SiC Interfaces by Time-Resolved Scanning Nonlinear Dielectric Microscopy

Yuji Yamagishi, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution observation of density of interface states (Du) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Du were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

Original languageEnglish
Title of host publicationISTFA 2018 - Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis
PublisherASM International
Pages534-537
Number of pages4
ISBN (Electronic)9781627080996
Publication statusPublished - 2018
Event44th International Symposium for Testing and Failure Analysis, ISTFA 2018 - Phoenix, United States
Duration: 2018 Oct 282018 Nov 1

Publication series

NameConference Proceedings from the International Symposium for Testing and Failure Analysis

Conference

Conference44th International Symposium for Testing and Failure Analysis, ISTFA 2018
Country/TerritoryUnited States
CityPhoenix
Period18/10/2818/11/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality

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