TY - GEN
T1 - High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy
AU - Yamagishi, Yuji
AU - Cho, Yasuo
N1 - Funding Information:
We wish to thank Shinsuke Harada, Tetsuo Hatakeyama, Mitsuru Sometani and Mariko Hayashi at National Institute of Advanced Industrial Science and Technology (AIST) for supplying samples and performing constant-capacitance DLTS measurements.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/5/22
Y1 - 2019/5/22
N2 - High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
AB - High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
KW - Density of interface states
KW - Local deep level transient spectroscopy
KW - SiO/SiC MOS interface
KW - Time-resolved scanning nonlinear dielectric microscopy
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U2 - 10.1109/IRPS.2019.8720482
DO - 10.1109/IRPS.2019.8720482
M3 - Conference contribution
AN - SCOPUS:85066738063
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2019 IEEE International Reliability Physics Symposium, IRPS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Reliability Physics Symposium, IRPS 2019
Y2 - 31 March 2019 through 4 April 2019
ER -