High-resolution rutherford backscattering spectroscopy for Nano-CMOS applications

Kenji Kimura; Zhao Ming; Kaoru Nakajima; Motofumi Suzuki

doi:10.1109/IWNC.2006.4570980

High-resolution rutherford backscattering spectroscopy for Nano-CMOS applications

Kenji Kimura, Zhao Ming, Kaoru Nakajima, Motofumi Suzuki

Institute for Materials Research (IMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A compact high-resolution RBS (HRBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applicstions. The HRBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observqation of high-k/Si interface using grazing-angl-esputtering- assisted HRBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HRBS is a powerful tool for Nano-CMOS applications.

Original language	English
Title of host publication	2006 International Workshop on Nano CMOS - Proceedings, IWNC
Pages	89-109
Number of pages	21
DOIs	https://doi.org/10.1109/IWNC.2006.4570980
Publication status	Published - 2006
Event	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan Duration: 2006 Jan 30 → 2006 Feb 1

Other

Other	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Country/Territory	Japan
City	Mishima, Shizuoka
Period	06/1/30 → 06/2/1

Keywords

Grazing angle sputtering
HfO
High resolution RBS
Hydrogen
Interfacial layer
LaO
Nano CMOS
Si emission

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWNC.2006.4570980

Cite this

@inproceedings{9165d7314bf7474a829cfacfa158c3b2,

title = "High-resolution rutherford backscattering spectroscopy for Nano-CMOS applications",

abstract = "A compact high-resolution RBS (HRBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applicstions. The HRBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observqation of high-k/Si interface using grazing-angl-esputtering- assisted HRBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HRBS is a powerful tool for Nano-CMOS applications.",

keywords = "Grazing angle sputtering, HfO, High resolution RBS, Hydrogen, Interfacial layer, LaO, Nano CMOS, Si emission",

author = "Kenji Kimura and Zhao Ming and Kaoru Nakajima and Motofumi Suzuki",

year = "2006",

doi = "10.1109/IWNC.2006.4570980",

language = "English",

isbn = "142440603X",

pages = "89--109",

booktitle = "2006 International Workshop on Nano CMOS - Proceedings, IWNC",

note = "1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 ; Conference date: 30-01-2006 Through 01-02-2006",

}

TY - GEN

T1 - High-resolution rutherford backscattering spectroscopy for Nano-CMOS applications

AU - Kimura, Kenji

AU - Ming, Zhao

AU - Nakajima, Kaoru

AU - Suzuki, Motofumi

PY - 2006

Y1 - 2006

N2 - A compact high-resolution RBS (HRBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applicstions. The HRBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observqation of high-k/Si interface using grazing-angl-esputtering- assisted HRBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HRBS is a powerful tool for Nano-CMOS applications.

AB - A compact high-resolution RBS (HRBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applicstions. The HRBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observqation of high-k/Si interface using grazing-angl-esputtering- assisted HRBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HRBS is a powerful tool for Nano-CMOS applications.

KW - Grazing angle sputtering

KW - HfO

KW - High resolution RBS

KW - Hydrogen

KW - Interfacial layer

KW - LaO

KW - Nano CMOS

KW - Si emission

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DO - 10.1109/IWNC.2006.4570980

M3 - Conference contribution

AN - SCOPUS:52149124344

SN - 142440603X

SN - 9781424406036

SP - 89

EP - 109

BT - 2006 International Workshop on Nano CMOS - Proceedings, IWNC

T2 - 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006

Y2 - 30 January 2006 through 1 February 2006

ER -

High-resolution rutherford backscattering spectroscopy for Nano-CMOS applications

Abstract

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Keywords

ASJC Scopus subject areas

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