High resolution X-ray photoelectron spectroscopy study on Si 3N4/Si interface structures and its correlation with hysteresis in C-V curves

M. Higuchi; A. Teramoto; M. Komura; S. Shinagawa; E. Ikenaga; H. Nohira; K. Kobayashi; T. Hattori; S. Sugawa; T. Ohmi

High resolution X-ray photoelectron spectroscopy study on Si ₃N₄/Si interface structures and its correlation with hysteresis in C-V curves

M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K. Kobayashi, T. Hattori, S. Sugawa, T. Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The structure and the electrical property of Si₃N₄ grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si⁺, Si²⁺ and Si³⁺. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si₃N₄/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si ₃N₄ grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si ₃N₄ grown at 600°C.

Original language	English
Title of host publication	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
Publisher	Electrochemical Society Inc.
Pages	267-276
Number of pages	10
Edition	1
ISBN (Electronic)	9781607685395
Publication status	Published - 2006
Event	5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 20

Publication series

Name	ECS Transactions
Number	1
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	05/10/16 → 05/10/20

Cite this

Higuchi, M., Teramoto, A., Komura, M., Shinagawa, S., Ikenaga, E., Nohira, H., Kobayashi, K., Hattori, T., Sugawa, S., & Ohmi, T. (2006). High resolution X-ray photoelectron spectroscopy study on Si ₃N₄/Si interface structures and its correlation with hysteresis in C-V curves. In Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 (1 ed., pp. 267-276). (ECS Transactions; Vol. 1, No. 1). Electrochemical Society Inc..

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title = "High resolution X-ray photoelectron spectroscopy study on Si 3N4/Si interface structures and its correlation with hysteresis in C-V curves",

abstract = "The structure and the electrical property of Si3N4 grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si+, Si2+ and Si3+. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si 3N4 grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si 3N4 grown at 600°C.",

author = "M. Higuchi and A. Teramoto and M. Komura and S. Shinagawa and E. Ikenaga and H. Nohira and K. Kobayashi and T. Hattori and S. Sugawa and T. Ohmi",

year = "2006",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "267--276",

booktitle = "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5",

edition = "1",

note = "5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 20-10-2005",

}

Higuchi, M, Teramoto, A, Komura, M, Shinagawa, S, Ikenaga, E, Nohira, H, Kobayashi, K, Hattori, T, Sugawa, S & Ohmi, T 2006, High resolution X-ray photoelectron spectroscopy study on Si ₃N₄/Si interface structures and its correlation with hysteresis in C-V curves. in Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. 1 edn, ECS Transactions, no. 1, vol. 1, Electrochemical Society Inc., pp. 267-276, 5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.

High resolution X-ray photoelectron spectroscopy study on Si ₃N₄/Si interface structures and its correlation with hysteresis in C-V curves. / Higuchi, M.; Teramoto, A.; Komura, M. et al.
Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. 1. ed. Electrochemical Society Inc., 2006. p. 267-276 (ECS Transactions; Vol. 1, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High resolution X-ray photoelectron spectroscopy study on Si 3N4/Si interface structures and its correlation with hysteresis in C-V curves

AU - Higuchi, M.

AU - Teramoto, A.

AU - Komura, M.

AU - Shinagawa, S.

AU - Ikenaga, E.

AU - Nohira, H.

AU - Kobayashi, K.

AU - Hattori, T.

AU - Sugawa, S.

AU - Ohmi, T.

PY - 2006

Y1 - 2006

N2 - The structure and the electrical property of Si3N4 grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si+, Si2+ and Si3+. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si 3N4 grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si 3N4 grown at 600°C.

AB - The structure and the electrical property of Si3N4 grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si+, Si2+ and Si3+. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si 3N4 grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si 3N4 grown at 600°C.

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M3 - Conference contribution

AN - SCOPUS:32844463577

T3 - ECS Transactions

SP - 267

EP - 276

BT - Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5

PB - Electrochemical Society Inc.

T2 - 5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society

Y2 - 16 October 2005 through 20 October 2005

ER -

High resolution X-ray photoelectron spectroscopy study on Si ₃N₄/Si interface structures and its correlation with hysteresis in C-V curves

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