TY - JOUR
T1 - High sensitivity and high readout speed electron beam detector using steep pn junction Si diode for low acceleration voltage
AU - Koda, Yasumasa
AU - Kuroda, Rihito
AU - Hara, Masaya
AU - Tsunoda, Hiroyuki
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2017, Society for Imaging Science and Technology.
PY - 2017
Y1 - 2017
N2 - In this work, Si pn junction diode-based electron beam detector with high sensitivity for low acceleration voltage and high readout speed is reported, by using steep pn junction formation technology, low dopant concentration Si substrate and multiple signal outputs. The electron quantum efficiency of fabricated detector at acceleration voltage of 1.0kV, 10kV, 20kV are 51.8%, 70.3% and 90.8%, respectively, which is suitable for low acceleration voltage scanning electron microscope. Also, by dividing the detector area into multiple regions, the pn junction capacitance is significantly reduced to 1/3 and 1/7 compared to the conventional structure, which is suitable for high signal readout speed that is limited by RC delay of pn junction.
AB - In this work, Si pn junction diode-based electron beam detector with high sensitivity for low acceleration voltage and high readout speed is reported, by using steep pn junction formation technology, low dopant concentration Si substrate and multiple signal outputs. The electron quantum efficiency of fabricated detector at acceleration voltage of 1.0kV, 10kV, 20kV are 51.8%, 70.3% and 90.8%, respectively, which is suitable for low acceleration voltage scanning electron microscope. Also, by dividing the detector area into multiple regions, the pn junction capacitance is significantly reduced to 1/3 and 1/7 compared to the conventional structure, which is suitable for high signal readout speed that is limited by RC delay of pn junction.
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U2 - 10.2352/ISSN.2470-1173.2017.11.IMSE-178
DO - 10.2352/ISSN.2470-1173.2017.11.IMSE-178
M3 - Conference article
AN - SCOPUS:85041503741
SN - 2470-1173
SP - 14
EP - 17
JO - IS and T International Symposium on Electronic Imaging Science and Technology
JF - IS and T International Symposium on Electronic Imaging Science and Technology
T2 - Image Sensors and Imaging Systems 2017, IMSE 2017
Y2 - 29 January 2017 through 2 February 2017
ER -