High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves

Akihide Hamano; Seigo Ohno; Hiroaki Minamide; Hiromasa Ito; Yoshiyuki Usuki

doi:10.4028/www.scientific.net/MSF.778-780.491

High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

SCI - Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 10¹⁸ cm^-3, 4.36 × 10^-14 s, 218 cm²V^-1s^-1, and 3.14 × 10^-2 Wcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2013
Editors	Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Publisher	Trans Tech Publications Ltd
Pages	491-494
Number of pages	4
ISBN (Print)	9783038350101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.491
Publication status	Published - 2014
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: 2013 Sept 29 → 2013 Oct 4

Publication series

Name	Materials Science Forum
Volume	778-780
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/Territory	Japan
City	Miyazaki
Period	13/9/29 → 13/10/4

Keywords

Drude-lorentz model
Silicon carbide
Terahertz imaging

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10.4028/www.scientific.net/MSF.778-780.491

Cite this

Hamano, A., Ohno, S., Minamide, H., Ito, H., & Usuki, Y. (2014). High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 491-494). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.491

Hamano, Akihide ; Ohno, Seigo ; Minamide, Hiroaki et al. / High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. Silicon Carbide and Related Materials 2013. editor / Hajime Okumura ; Hajime Okumura ; Hiroshi Harima ; Tsunenobu Kimoto ; Masahiro Yoshimoto ; Heiji Watanabe ; Tomoaki Hatayama ; Hideharu Matsuura ; Yasuhisa Sano ; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. pp. 491-494 (Materials Science Forum).

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title = "High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves",

abstract = "THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 1018 cm-3, 4.36 × 10-14 s, 218 cm2V-1s-1, and 3.14 × 10-2 Wcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.",

keywords = "Drude-lorentz model, Silicon carbide, Terahertz imaging",

author = "Akihide Hamano and Seigo Ohno and Hiroaki Minamide and Hiromasa Ito and Yoshiyuki Usuki",

year = "2014",

doi = "10.4028/www.scientific.net/MSF.778-780.491",

language = "English",

isbn = "9783038350101",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "491--494",

editor = "Hajime Okumura and Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",

booktitle = "Silicon Carbide and Related Materials 2013",

note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

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Hamano, A, Ohno, S, Minamide, H, Ito, H & Usuki, Y 2014, High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. in H Okumura, H Okumura, H Harima, T Kimoto, M Yoshimoto, H Watanabe, T Hatayama, H Matsuura, Y Sano & T Funaki (eds), Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 491-494, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 13/9/29. https://doi.org/10.4028/www.scientific.net/MSF.778-780.491

High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. / Hamano, Akihide; Ohno, Seigo; Minamide, Hiroaki et al.
Silicon Carbide and Related Materials 2013. ed. / Hajime Okumura; Hajime Okumura; Hiroshi Harima; Tsunenobu Kimoto; Masahiro Yoshimoto; Heiji Watanabe; Tomoaki Hatayama; Hideharu Matsuura; Yasuhisa Sano; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. p. 491-494 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves

AU - Hamano, Akihide

AU - Ohno, Seigo

AU - Minamide, Hiroaki

AU - Ito, Hiromasa

AU - Usuki, Yoshiyuki

PY - 2014

Y1 - 2014

N2 - THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 1018 cm-3, 4.36 × 10-14 s, 218 cm2V-1s-1, and 3.14 × 10-2 Wcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.

AB - THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 1018 cm-3, 4.36 × 10-14 s, 218 cm2V-1s-1, and 3.14 × 10-2 Wcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.

KW - Drude-lorentz model

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KW - Terahertz imaging

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A2 - Hatayama, Tomoaki

A2 - Matsuura, Hideharu

A2 - Sano, Yasuhisa

A2 - Funaki, Tsuyoshi

PB - Trans Tech Publications Ltd

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ER -

Hamano A, Ohno S, Minamide H, Ito H, Usuki Y. High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. In Okumura H, Okumura H, Harima H, Kimoto T, Yoshimoto M, Watanabe H, Hatayama T, Matsuura H, Sano Y, Funaki T, editors, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd. 2014. p. 491-494. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.778-780.491

High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves

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Keywords

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