TY - GEN
T1 - High-speed and highly accurate evaluation of electrical characteristics in MOSFETs
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2013
Y1 - 2013
N2 - Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.
AB - Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.
KW - MOSFET
KW - Random telegraph signal
KW - V variability
KW - leakage current
KW - test circuit
UR - http://www.scopus.com/inward/record.url?scp=84883360650&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84883360650&partnerID=8YFLogxK
U2 - 10.1109/ICICDT.2013.6563333
DO - 10.1109/ICICDT.2013.6563333
M3 - Conference contribution
AN - SCOPUS:84883360650
SN - 9781467347419
T3 - ICICDT 2013 - International Conference on IC Design and Technology, Proceedings
SP - 187
EP - 190
BT - ICICDT 2013 - International Conference on IC Design and Technology, Proceedings
T2 - 2013 International Conference on IC Design and Technology, ICICDT 2013
Y2 - 29 May 2013 through 31 May 2013
ER -