High-speed and low-power operation of a resonant tunneling logic gate MOBILE

Koichi Maezawa; Hideaki Matsuzaki; Masafumi Yamamoto; Taiichi Otsuji

doi:10.1109/55.661171

High-speed and low-power operation of a resonant tunneling logic gate MOBILE

Koichi Maezawa, Hideaki Matsuzaki, Masafumi Yamamoto, Taiichi Otsuji

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Abstract

High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostablebistable transition logic element (MOBILE). The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology. This operation bit rate is close to the cutoff frequency of the 0.7-μm gate HEMT's used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer. The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTD's. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.

Original language	English
Pages (from-to)	80-82
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	3
DOIs	https://doi.org/10.1109/55.661171
Publication status	Published - 1998 Mar

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abstract = "High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostablebistable transition logic element (MOBILE). The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology. This operation bit rate is close to the cutoff frequency of the 0.7-μm gate HEMT's used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer. The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTD's. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.",

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T1 - High-speed and low-power operation of a resonant tunneling logic gate MOBILE

AU - Maezawa, Koichi

AU - Matsuzaki, Hideaki

AU - Yamamoto, Masafumi

AU - Otsuji, Taiichi

PY - 1998/3

Y1 - 1998/3

N2 - High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostablebistable transition logic element (MOBILE). The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology. This operation bit rate is close to the cutoff frequency of the 0.7-μm gate HEMT's used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer. The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTD's. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.

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High-speed and low-power operation of a resonant tunneling logic gate MOBILE

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