High-speed and low-power operation of a resonant tunneling logic gate MOBILE

Koichi Maezawa, Hideaki Matsuzaki, Masafumi Yamamoto, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

109 Citations (Scopus)


High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostablebistable transition logic element (MOBILE). The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology. This operation bit rate is close to the cutoff frequency of the 0.7-μm gate HEMT's used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer. The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTD's. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.

Original languageEnglish
Pages (from-to)80-82
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 1998 Mar


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