@inproceedings{cbda57b62b48411c8ae5484a34347088,
title = "High-speed deposition of SiC thick film by halide precursor",
abstract = "Polycrystalline β-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 μm h-1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.",
keywords = "Halide CVD, High-speed, β-SiC",
author = "Mingxu Han and Wei Zhou and Dingheng Zheng and Rong Tu and Song Zhang and Takashi Goto",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 ; Conference date: 09-12-2013 Through 12-12-2013",
year = "2014",
doi = "10.4028/www.scientific.net/KEM.616.37",
language = "English",
isbn = "9783038351306",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "37--42",
booktitle = "Advanced Ceramics and Novel Processing",
}