TY - JOUR
T1 - High-speed epitaxial growth of β- SiC film on Si (111) single crystal by laser chemical vapor deposition
AU - Zhang, Song
AU - Tu, Rong
AU - Goto, Takashi
PY - 2012/9
Y1 - 2012/9
N2 - (111)-oriented β-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [1̄10]//Si [1̄10] and SiC [1̄01]//Si [1̄01]. The deposition rate of the β-SiC film was 40 μm/h, 10 times higher than that of conventional CVD.
AB - (111)-oriented β-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [1̄10]//Si [1̄10] and SiC [1̄01]//Si [1̄01]. The deposition rate of the β-SiC film was 40 μm/h, 10 times higher than that of conventional CVD.
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U2 - 10.1111/j.1551-2916.2012.05354.x
DO - 10.1111/j.1551-2916.2012.05354.x
M3 - Article
AN - SCOPUS:84865711575
SN - 0002-7820
VL - 95
SP - 2782
EP - 2784
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 9
ER -