High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Koichi Maezawa; Hideaki Matsuzaki; Kunihiro Arai; Taiichi Otsuji; Masafumi Yamamoto

High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Koichi Maezawa, Hideaki Matsuzaki, Kunihiro Arai, Taiichi Otsuji, Masafumi Yamamoto

RIEC - Information Communication Platforms Division

Nippon Telegraph & Telephone

Research output: Contribution to conference › Paper › peer-review

10 Citations (Scopus)

Abstract

The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

Original language	English
Pages	94-95
Number of pages	2
Publication status	Published - 1997
Event	Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: 1997 Jun 23 → 1997 Jun 25

Conference

Conference	Proceedings of the 1997 55th Annual Device Research Conference
City	Fort Collins, CO, USA
Period	97/6/23 → 97/6/25

Cite this

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title = "High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)",

abstract = "The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.",

author = "Koichi Maezawa and Hideaki Matsuzaki and Kunihiro Arai and Taiichi Otsuji and Masafumi Yamamoto",

year = "1997",

language = "English",

pages = "94--95",

note = "Proceedings of the 1997 55th Annual Device Research Conference ; Conference date: 23-06-1997 Through 25-06-1997",

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High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element). / Maezawa, Koichi; Matsuzaki, Hideaki; Arai, Kunihiro et al.
1997. 94-95 Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

AU - Maezawa, Koichi

AU - Matsuzaki, Hideaki

AU - Arai, Kunihiro

AU - Otsuji, Taiichi

AU - Yamamoto, Masafumi

PY - 1997

Y1 - 1997

N2 - The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

AB - The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

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M3 - Paper

AN - SCOPUS:0030658228

SP - 94

EP - 95

T2 - Proceedings of the 1997 55th Annual Device Research Conference

Y2 - 23 June 1997 through 25 June 1997

ER -

High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Abstract

Conference

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