High-Speed Photoconductive Detectors Using GalnAs

John C. Gammel, Hideo Ohno, Joseph M. Ballantyne

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


Because of its low bandgap, GalnAs lattice matched to InP is a promising material for photodetection for wavelengths to approximately 1.6 μm In this paper we will present data on high speed photodetectors fabricated using n-type GalnAs grown by molecular beam epitaxy (MBE) on semiinsulating InP substrates. The detectors show high speed response (∼200 ps FWHM) with internal gain of ∼10, From the device I-V characteristics, the electron velocity versus electric field curves in GaIn As are inferred. The high mobility and peak velocity of electrons in GalnAs show a direct relation to the performance of the experimental photoconductive detectors.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalIEEE Journal of Quantum Electronics
Issue number2
Publication statusPublished - 1981 Feb


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