High-Speed Preparation of Highly (100)-Oriented CeO2 Film by Laser Chemical Vapor Deposition

Pei Zhao, Shi Su, Ying Wang, Chen Chi, Zhan Hui Zhang, Yang Wu Mao, Zhi liang Huang, Yuan Lai Xu, Takashi Goto, W. K. Wong-Ng

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


CeO2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)-oriented CeO2 films with wedge-caped columnar grains were prepared, whose epitaxial growth relationship was CeO2 [100]//LAO [100] (CeO2 [010]//LAO [011]). Their full width at half maximum of the ω-scan on the (200) reflection and that of the ϕ-scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO2 film with pure (100) preferred orientation could be obtained was 30 μm h−1.

Original languageEnglish
Pages (from-to)3104-3110
Number of pages7
JournalJournal of the American Ceramic Society
Issue number9
Publication statusPublished - 2016 Sept 1


  • CeO buffer layer
  • LaAlO single crystal
  • epitaxial growth
  • high deposition rate
  • laser chemical vapor deposition

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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