High-Speed Preparation of Highly (100)-Oriented CeO₂ Film by Laser Chemical Vapor Deposition

CeO₂ films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO₃ single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)-oriented CeO₂ films with wedge-caped columnar grains were prepared, whose epitaxial growth relationship was CeO₂ [100]//LAO [100] (CeO₂ [010]//LAO [011]). Their full width at half maximum of the ω-scan on the (200) reflection and that of the ϕ-scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO₂ film with pure (100) preferred orientation could be obtained was 30 μm h⁻¹.