TY - GEN
T1 - High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic THz detection
AU - Hosotani, T.
AU - Kasuya, F.
AU - Suzuki, M.
AU - Suemitsu, T.
AU - Otsuji, T.
AU - Takida, Y.
AU - Ito, H.
AU - Minamide, H.
AU - Ishibashi, T.
AU - Shimizu, M.
AU - Satou, A.
N1 - Funding Information:
This work was financially supported by JSPS-KAKENHI No. 16K14243, Japan, SCOPE (No. 145002001), Japan, JST-ANR “WITH”, Japan, the Murata Science Foundation, Japan, and “R&D project on carrier-conversion technology with high environmental tolerance Re-search and System demonstration on high capacity O/E and E/O carrier-conversion technology for next generation wireless and wired networks” of the Commissioned Research of National Institute of Information and Communications Technology (NICT), Japan. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrication.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/12
Y1 - 2017/10/12
N2 - Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated from an injection-seeded THz-wave parametric generator (is-TPG). From the pulse response waveform of the output photovoltage signal, it is demonstrated that the response time of the detector at least as fast as 100 ps.
AB - Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated from an injection-seeded THz-wave parametric generator (is-TPG). From the pulse response waveform of the output photovoltage signal, it is demonstrated that the response time of the detector at least as fast as 100 ps.
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U2 - 10.1109/IRMMW-THz.2017.8066947
DO - 10.1109/IRMMW-THz.2017.8066947
M3 - Conference contribution
AN - SCOPUS:85033699355
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
PB - IEEE Computer Society
T2 - 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Y2 - 27 August 2017 through 1 September 2017
ER -