Abstract
The structure of a high-speed self-aligned SiGe heterojunction bipolar transistor (HBT) was optimized through investigations of its characteristics related to the collector-base and emitter-base junctions. The SiGe HBT was fabricated by selective-epitaxial growth (SEG). As a result of the optimization, its cutoff frequency was increased to 130GHz and its ECL gate-delay time was reduced to 5.3ps. Based on this SiGe HBT, an IC chipset for 40Gb/s optical-fiber-links, a 5.8GHz electronic-toll-collection transceiver IC, and high-speed frequency divider ICs (operating up to the millimeter-wave band) were developed.
| Original language | English |
|---|---|
| Pages (from-to) | 306-311 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 224 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2004 Mar 15 |
| Externally published | Yes |
Keywords
- Bipolar transistors
- Crystal growth
- Epitaxy
- Heterostructure
- Microwave circuits
- Monolithic integrated circuits
- Optical communication systems
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films