High-speed solution growth of single crystal AlN from Cr-Co-Al solvent

Shota Watanabe, Masashi Nagaya, Yukihisa Takeuchi, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Toru Ujihara

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Citations (Scopus)

Abstract

We achieved high-speed solution growth of AlN single crystal from Cr-Co-Al solvent, which was designed on the basis of thermodynamic calculation. To avoid the unintentional precipitations at the interface between solution and gas as well as to increase the growth rate, we designed the solution growth condition, in which the solution near the interface is undersaturated and the solution near the growth position is supersaturated. To realize this kind of ideal condition, we selected Co and Cr as solvent materials due to their high affinity with nitrogen or aluminum. Finally, we achieved a growth rate as high as 200 μm/h in maximum.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages1210-1213
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/TerritoryItaly
CitySicily
Period15/10/415/10/9

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