High-speed voltage-control spintronics memory (High-Speed VoCSM)

H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, Y. Kamiguchi, S. Fujita, A. Kurobe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)


We propose a new spintronics-based memory architecture with 2 MTJs and 4 transistors as a unit cell for high-speed application. The architecture employs spin-Hall effect as a writing principle and voltage-control-magneticanisotropy (VCMA) effect as a write speed acceleration. We successfully demonstrated the unique complementary flashwriting scheme and proved a potential of ultrahigh speed writing with the prototype unit-cell and the test-element.

Original languageEnglish
Title of host publication2017 IEEE 9th International Memory Workshop, IMW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509032723
Publication statusPublished - 2017 Jun 5
Externally publishedYes
Event9th IEEE International Memory Workshop, IMW 2017 - Monterey, United States
Duration: 2017 May 142017 May 17

Publication series

Name2017 IEEE 9th International Memory Workshop, IMW 2017


Other9th IEEE International Memory Workshop, IMW 2017
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering


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