High-temperature active oxidation of CVD-Si3N4 in ArO2 atmosphere

Takayuki Narushima, Yasutaka Iguchi, Takashi Goto, Toshio Hirai, Yoshio Yokoyama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Active oxidation of CVD-Si3N4 in ArO2 atmospheres was investigated at temperatures from 1823 to 1923 K. Active oxidation rates increased with increasing oxygen partial pressure, temperature and total gas flow rate. The rate-controlling step for active oxidation is oxygen diffusion through a gaseous boundary layer. The transition from active to passive oxidation was observed at a certain oxygen partial pressure. The transition behavior is discussed using Wagner's model.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalSolid State Ionics
Volume53-56
Issue numberPART 1
DOIs
Publication statusPublished - 1992

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