High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures

Y. Hirayama; S. Tarucha

doi:10.1063/1.110799

High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures

Y. Hirayama, S. Tarucha

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.

Original language	English
Pages (from-to)	2366-2368
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	17
DOIs	https://doi.org/10.1063/1.110799
Publication status	Published - 1993

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10.1063/1.110799

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title = "High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures",

abstract = "Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.",

author = "Y. Hirayama and S. Tarucha",

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AB - Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.

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High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures

Abstract

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