High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

Y. Z. Yoo; Y. Osaka; T. Fukumura; Zhengwu Jin; M. Kawasaki; H. Koinuma; T. Chikyow; P. Ahmet; A. Setoguchi; S. F. Chichibu

doi:10.1063/1.1344572

High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

Y. Z. Yoo, Y. Osaka, T. Fukumura, Zhengwu Jin, M. Kawasaki, H. Koinuma, T. Chikyow, P. Ahmet, A. Setoguchi, S. F. Chichibu

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700°C and all films were found to have a specific preferential orientation. With increasing T_s, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700°C. The presence of ZnS⁺ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV.

Original language	English
Pages (from-to)	616-618
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.1344572
Publication status	Published - 2001 Jan 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700°C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700°C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV.",

author = "Yoo, {Y. Z.} and Y. Osaka and T. Fukumura and Zhengwu Jin and M. Kawasaki and H. Koinuma and T. Chikyow and P. Ahmet and A. Setoguchi and Chichibu, {S. F.}",

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T1 - High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

AU - Yoo, Y. Z.

AU - Osaka, Y.

AU - Fukumura, T.

AU - Jin, Zhengwu

AU - Kawasaki, M.

AU - Koinuma, H.

AU - Chikyow, T.

AU - Ahmet, P.

AU - Setoguchi, A.

AU - Chichibu, S. F.

PY - 2001/1/29

Y1 - 2001/1/29

N2 - ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700°C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700°C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV.

AB - ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700°C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700°C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV.

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High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

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