High temperature transport properties at metal/SrTiO3 interfaces

Tatsuya Kawada, Naofumi Iizawa, Michihisa Tomida, Atsushi Kaimai, Ken Ichi Kawamura, Yutaka Nigara, Junichiro Mizusaki

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23 Citations (Scopus)


High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

Original languageEnglish
Pages (from-to)687-691
Number of pages5
JournalJournal of the European Ceramic Society
Issue number6-7
Publication statusPublished - 1999 Jun


  • Electrical properties.
  • Interfaces
  • SrTiO


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