High temperature x-ray diffraction study of melt structure of silicon

Yoshio Waseda, Kozo Shinoda, Kazumasa Sugiyama, Susumu Takeda, Kazutaka Terashima, James Makoto Toguri

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3 Citations (Scopus)


The structure of molten silicon has been determined at three temperatures of 1440, 1460 and 1520°C by X-ray diffraction. All structure factors indicate a characteristic small hump on the higher wave vector side of the first peak and such specific feature becomes slightly obscure as the temperature increases. A small peak is found in the region between the first (0.245 nm) and second (0.55 nm) main peaks in the pair distribution functions with a shallow minimum at about 0.35 nm. This is not observed in the pair distribution functions for usual molten metals. The coordination numbers in the near-neighbor region have been estimated by applying the interference function refining technique and the results for the first two neighbors are 6.3 (4.6 + 1.7) at 1440°C, 5.7 (4.5 + 1.2) at 1460°C and 5.8 (4.4 + 1.4) at 1520°C. The present structural information is consistent with the recent results of density and electrical resistivity of molten silicon.

Original languageEnglish
Pages (from-to)4214-4218
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number8 R
Publication statusPublished - 1995 Aug


  • High temperature
  • Molten state
  • Silicon
  • X-ray diffraction


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