High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system

Jung Hwan Kim; Norihiko L. Okamoto; Kyosuke Kishida; Katsushi Tanaka; Haruyuki Inui

doi:10.1016/j.actamat.2005.12.032

High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system

Jung Hwan Kim, Norihiko L. Okamoto, Kyosuke Kishida, Katsushi Tanaka, Haruyuki Inui

IMR - Materials Development Division

Kyoto University

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

The thermoelectric properties of type-III clathrate compounds, Ba₂₄Ga_XGe_100-X, have been investigated as a function of Ga content and temperature. The substitution of Ga atoms for Ge atoms leads to a decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with increasing Ga content and temperature. Both electronic and lattice thermal conductivities decrease with an increase in Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open dodecahedrons, respectively. A very high thermoelectric figure of merit (ZT) value of 1.25 is obtained at 670 °C when X = 15.

Original language	English
Pages (from-to)	2057-2062
Number of pages	6
Journal	Acta Materialia
Volume	54
Issue number	8
DOIs	https://doi.org/10.1016/j.actamat.2005.12.032
Publication status	Published - 2006 May

Keywords

Intermetallic compounds
Microstructure
Thermoelectric
Zintl concept

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10.1016/j.actamat.2005.12.032

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title = "High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system",

abstract = "The thermoelectric properties of type-III clathrate compounds, Ba24GaXGe100-X, have been investigated as a function of Ga content and temperature. The substitution of Ga atoms for Ge atoms leads to a decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with increasing Ga content and temperature. Both electronic and lattice thermal conductivities decrease with an increase in Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open dodecahedrons, respectively. A very high thermoelectric figure of merit (ZT) value of 1.25 is obtained at 670 °C when X = 15.",

keywords = "Intermetallic compounds, Microstructure, Thermoelectric, Zintl concept",

author = "Kim, {Jung Hwan} and Okamoto, {Norihiko L.} and Kyosuke Kishida and Katsushi Tanaka and Haruyuki Inui",

note = "Funding Information: This work was supported by Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Science and Culture (No. 17656227) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from the Ministry of Education, Science and Culture. One of the authors (J.H.K.) expresses his great appreciation for the Monbusho scholarship from the Ministry of Education, Science and Culture, Japan. One of the authors (N.L.O.) also greatly appreciates the support from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.",

year = "2006",

month = may,

doi = "10.1016/j.actamat.2005.12.032",

language = "English",

volume = "54",

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journal = "Acta Materialia",

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T1 - High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system

AU - Kim, Jung Hwan

AU - Okamoto, Norihiko L.

AU - Kishida, Kyosuke

AU - Tanaka, Katsushi

AU - Inui, Haruyuki

N1 - Funding Information: This work was supported by Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Science and Culture (No. 17656227) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from the Ministry of Education, Science and Culture. One of the authors (J.H.K.) expresses his great appreciation for the Monbusho scholarship from the Ministry of Education, Science and Culture, Japan. One of the authors (N.L.O.) also greatly appreciates the support from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.

PY - 2006/5

Y1 - 2006/5

N2 - The thermoelectric properties of type-III clathrate compounds, Ba24GaXGe100-X, have been investigated as a function of Ga content and temperature. The substitution of Ga atoms for Ge atoms leads to a decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with increasing Ga content and temperature. Both electronic and lattice thermal conductivities decrease with an increase in Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open dodecahedrons, respectively. A very high thermoelectric figure of merit (ZT) value of 1.25 is obtained at 670 °C when X = 15.

AB - The thermoelectric properties of type-III clathrate compounds, Ba24GaXGe100-X, have been investigated as a function of Ga content and temperature. The substitution of Ga atoms for Ge atoms leads to a decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with increasing Ga content and temperature. Both electronic and lattice thermal conductivities decrease with an increase in Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open dodecahedrons, respectively. A very high thermoelectric figure of merit (ZT) value of 1.25 is obtained at 670 °C when X = 15.

KW - Intermetallic compounds

KW - Microstructure

KW - Thermoelectric

KW - Zintl concept

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ER -

High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system

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