Abstract
(001)-oriented α-Al2O3 films were prepared on polycrystalline AlN substrates by laser chemical vapor deposition at deposition temperatures of 1373-1455 K. The (001) orientation degree increased from 36% to 90% with increasing vaporization temperature of the Al precursor from 438 to 453 K; the deposition rate also increased from 82 to 175 μm h-1. The (001)-oriented α-Al2O3 films exhibited columnar growth, and hexagonal terraces of α-Al2O3 (001) plane were observed on the surface.
Original language | English |
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Pages (from-to) | 11-13 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 106 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Laser CVD
- Microstructure
- Oriented growth
- α-AlO
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering