Highly (100)-oriented Ce _{1 - X}Fe _xO _{2 - δ} solid solution films prepared by laser chemical vapor deposition

Ce _{1 - x}Fe _xO _{2 - δ} solid solution films were prepared on amorphous silica substrates by laser chemical vapor deposition using metal dipivaloylmethanate precursors and a semiconductor InGaAlAs (808 nm in wavelength) laser. X-ray diffraction revealed the formation of single Ce _{1 - x}Fe _xO _{2 - δ} phase at x ≤ 0.15, while CeO ₂ and Fe ₂O ₃ phases were found for higher Fe content. Highly (100)-oriented Ce _{1 - x}Fe _xO _{2 - δ} (x = 0.02) films were obtained at laser power, P _L = 50-200 W and deposition temperature, T _dep = 800-1063 K. Lotgering factor (200) was calculated to be above 0.8 for films prepared at P _L = 50-150 W. X-ray photoelectron spectroscopy revealed the presence of Fe ³⁺, Ce ⁴⁺ and Ce ³⁺ on solid solution films. Cross-sectional transmission electron microscope images disclosed a film columnar feather-like structure with a large number of nano-scale interspaces. Deposition rates were 2 or 3 orders of magnitude higher than those reported for conventional metal organic chemical vapor deposition of CeO ₂.