Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

C. M. Yang, K. Uehara, S. K. Kim, S. Kameda, H. Nakase, K. Tsubouchi

Research output: Contribution to journalConference articlepeer-review

27 Citations (Scopus)


We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100MHz, which is evaluated from Butterworth-Van Dyke (BVD) equivalent circuit model of FBAR.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalProceedings of the IEEE Ultrasonics Symposium
Publication statusPublished - 2003
Event2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States
Duration: 2003 Oct 52003 Oct 8


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