TY - JOUR
T1 - Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter
AU - Yang, C. M.
AU - Uehara, K.
AU - Kim, S. K.
AU - Kameda, S.
AU - Nakase, H.
AU - Tsubouchi, K.
PY - 2003
Y1 - 2003
N2 - We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100MHz, which is evaluated from Butterworth-Van Dyke (BVD) equivalent circuit model of FBAR.
AB - We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100MHz, which is evaluated from Butterworth-Van Dyke (BVD) equivalent circuit model of FBAR.
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M3 - Conference article
AN - SCOPUS:4143072680
SN - 1051-0117
VL - 1
SP - 170
EP - 173
JO - Proceedings of the IEEE Ultrasonics Symposium
JF - Proceedings of the IEEE Ultrasonics Symposium
T2 - 2003 IEEE Ultrasonics Symposium - Proceedings
Y2 - 5 October 2003 through 8 October 2003
ER -