TY - JOUR
T1 - Highly Oriented and Stress Modified Thick AlN Films Deposited on Low Thermal Expansion Alloy Substrates for Flexible Electronics in Harsh Environment
AU - Moriwaki, N.
AU - Minh, L. V.
AU - Kuwano, H.
N1 - Funding Information:
This work was financially supported by A-STEP project of Japan Science and Technology Agency (JST) (AS2815014R) and by Environment-friendly device development project of Miyagi prefecture government.
Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2019/12/4
Y1 - 2019/12/4
N2 - Highly oriented and stress-modified thick aluminium nitride (AlN) films were deposited by reactive AC magnetron sputtering on 4 inch substrates and foils made of the low thermal expansion alloy "42Alloy" for flexible electronics in harsh environment. As a result of modification of film depositing conditions for reducing residual stress, a flat three micrometer thick AlN film was deposited successfully on the 50 μm thick 42Alloy foil, and its full width at half maximum of AlN(002) was 5.00 degree. And, it was confirmed that the AlN films on 42Alloy foils have piezoelectricity by measurement of a tip displacement of the cantilever-shape test structure.
AB - Highly oriented and stress-modified thick aluminium nitride (AlN) films were deposited by reactive AC magnetron sputtering on 4 inch substrates and foils made of the low thermal expansion alloy "42Alloy" for flexible electronics in harsh environment. As a result of modification of film depositing conditions for reducing residual stress, a flat three micrometer thick AlN film was deposited successfully on the 50 μm thick 42Alloy foil, and its full width at half maximum of AlN(002) was 5.00 degree. And, it was confirmed that the AlN films on 42Alloy foils have piezoelectricity by measurement of a tip displacement of the cantilever-shape test structure.
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U2 - 10.1088/1742-6596/1407/1/012109
DO - 10.1088/1742-6596/1407/1/012109
M3 - Conference article
AN - SCOPUS:85077812645
SN - 1742-6588
VL - 1407
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012109
T2 - 18th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2018
Y2 - 4 December 2018 through 7 December 2018
ER -