Highly oriented and stress-modified thick aluminium nitride (AlN) films were deposited by reactive AC magnetron sputtering on 4 inch substrates and foils made of the low thermal expansion alloy "42Alloy" for flexible electronics in harsh environment. As a result of modification of film depositing conditions for reducing residual stress, a flat three micrometer thick AlN film was deposited successfully on the 50 μm thick 42Alloy foil, and its full width at half maximum of AlN(002) was 5.00 degree. And, it was confirmed that the AlN films on 42Alloy foils have piezoelectricity by measurement of a tip displacement of the cantilever-shape test structure.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2019 Dec 4|
|Event||18th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2018 - Daytona Beach, United States|
Duration: 2018 Dec 4 → 2018 Dec 7