Highly reliable TaO x ReRAM and direct evidence of redox reaction mechanism

Z. Wei; Y. Kanzawa; K. Arita; Y. Katoh; K. Kawai; S. Muraoka; S. Mitani; S. Fujii; K. Katayama; M. Iijima; T. Mikawa; T. Ninomiya; R. Miyanaga; Y. Kawashima; K. Tsuji; A. Himeno; T. Okada; R. Azuma; K. Shimakawa; H. Sugaya; T. Takagi; R. Yasuhara; KHoriba; H. Kumigashira; M. Oshima

doi:10.1109/IEDM.2008.4796676

Highly reliable TaO _x ReRAM and direct evidence of redox reaction mechanism

Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. SugayaT. Takagi, R. Yasuhara, KHoriba, H. Kumigashira, M. Oshima

IMRAM - Division of Inorganic Material Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

196 Citations (Scopus)

Abstract

Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 ⁹ cycles, sufficient retention exceeding 10 years at 85°C. TaO _x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 μm CMOS process.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796676
Publication status	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

Access to Document

10.1109/IEDM.2008.4796676

Cite this

Wei, Z., Kanzawa, Y., Arita, K., Katoh, Y., Kawai, K., Muraoka, S., Mitani, S., Fujii, S., Katayama, K., Iijima, M., Mikawa, T., Ninomiya, T., Miyanaga, R., Kawashima, Y., Tsuji, K., Himeno, A., Okada, T., Azuma, R., Shimakawa, K., ... Oshima, M. (2008). Highly reliable TaO _x ReRAM and direct evidence of redox reaction mechanism. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796676 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796676

@inproceedings{249b57c57f1749bab4d80c319dd618d4,

title = "Highly reliable TaO x ReRAM and direct evidence of redox reaction mechanism",

abstract = "Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 9 cycles, sufficient retention exceeding 10 years at 85°C. TaO x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 μm CMOS process.",

author = "Z. Wei and Y. Kanzawa and K. Arita and Y. Katoh and K. Kawai and S. Muraoka and S. Mitani and S. Fujii and K. Katayama and M. Iijima and T. Mikawa and T. Ninomiya and R. Miyanaga and Y. Kawashima and K. Tsuji and A. Himeno and T. Okada and R. Azuma and K. Shimakawa and H. Sugaya and T. Takagi and R. Yasuhara and KHoriba and H. Kumigashira and M. Oshima",

year = "2008",

doi = "10.1109/IEDM.2008.4796676",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Wei, Z, Kanzawa, Y, Arita, K, Katoh, Y, Kawai, K, Muraoka, S, Mitani, S, Fujii, S, Katayama, K, Iijima, M, Mikawa, T, Ninomiya, T, Miyanaga, R, Kawashima, Y, Tsuji, K, Himeno, A, Okada, T, Azuma, R, Shimakawa, K, Sugaya, H, Takagi, T, Yasuhara, R, KHoriba, , Kumigashira, H & Oshima, M 2008, Highly reliable TaO _x ReRAM and direct evidence of redox reaction mechanism. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796676, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796676

TY - GEN

T1 - Highly reliable TaO x ReRAM and direct evidence of redox reaction mechanism

AU - Wei, Z.

AU - Kanzawa, Y.

AU - Arita, K.

AU - Katoh, Y.

AU - Kawai, K.

AU - Muraoka, S.

AU - Mitani, S.

AU - Fujii, S.

AU - Katayama, K.

AU - Iijima, M.

AU - Mikawa, T.

AU - Ninomiya, T.

AU - Miyanaga, R.

AU - Kawashima, Y.

AU - Tsuji, K.

AU - Himeno, A.

AU - Okada, T.

AU - Azuma, R.

AU - Shimakawa, K.

AU - Sugaya, H.

AU - Takagi, T.

AU - Yasuhara, R.

AU - KHoriba,

AU - Kumigashira, H.

AU - Oshima, M.

PY - 2008

Y1 - 2008

N2 - Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 9 cycles, sufficient retention exceeding 10 years at 85°C. TaO x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 μm CMOS process.

AB - Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 9 cycles, sufficient retention exceeding 10 years at 85°C. TaO x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 μm CMOS process.

UR - http://www.scopus.com/inward/record.url?scp=64549160578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64549160578&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796676

DO - 10.1109/IEDM.2008.4796676

M3 - Conference contribution

AN - SCOPUS:64549160578

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -