TY - GEN
T1 - Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond
AU - Takemura, R.
AU - Kawahara, T.
AU - Ono, K.
AU - Miura, K.
AU - Matsuoka, H.
AU - Ohno, H.
PY - 2010
Y1 - 2010
N2 - We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn't switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.
AB - We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn't switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.
KW - Disruptive reading
KW - MRAM
KW - Restoring and TMR
KW - SPRAM
UR - http://www.scopus.com/inward/record.url?scp=77957930077&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957930077&partnerID=8YFLogxK
U2 - 10.1109/IMW.2010.5488324
DO - 10.1109/IMW.2010.5488324
M3 - Conference contribution
AN - SCOPUS:77957930077
SN - 9781424467211
T3 - 2010 IEEE International Memory Workshop, IMW 2010
BT - 2010 IEEE International Memory Workshop, IMW 2010
T2 - 2010 IEEE International Memory Workshop, IMW 2010
Y2 - 16 May 2010 through 19 May 2010
ER -