We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn't switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.